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  mmdt2222a dual surface mount npn transistors 1 2 3 4 5 6 1 2 3 4 5 6 features applications maximum ratings rating symbol value units this device contains two electrically-isolated 2n2222a npn transistors. the two transistors have well matched hfe and are encapsulated in an ultra-small sot-363 (sc70-6l) package. this device is ideal for portable applications where board space is at a premium. electrically isolated dual npn switching transistor general purpose amplifier applications hand-held computers, pdas collector-base voltage collector-emitter voltage emitter-base voltage voltage collector current total power dissipation (note 1) operating junction temperature range storage temperature range 1/2/2006 page 1 www.panjit.com 75 v v 40 v 6.0 ma 600 200 mw c -55 to +150 c -55 to +150 v v v i p t t cbo ceo eb c d stg t = 25c unless otherwise noted j j note 1. fr-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout sot- 363 thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient (note 1) 625 value r c/w lead-free plating (100% matte tin finish) device marking code: m2a 2 654 13 2 654 13
v = 30v, i =150ma v (off) = -0.5v, i = 15m a - i = 10ua www.panjit.com 1/2/2006 page 2 electrical characteristics (each transistor) t = 25c unless otherwise noted j c parameter symbol min units collector-emitter breakdown voltag e conditions typ max v (br)ceo 40 - - v c 75 - - v note 2. short duration test pulse used to minimize self-heating (br)cbo v collector-base breakdown voltag e i = 10ma i = 10ua e emitter-base breakdown voltage (br)ebo v v = 60v, v = 3.0v eb ce i cex collector cutoff current 6.0 - - v - - 10 na base cutoff current i bl dc current gain (note 2) h fe - - 20 na - - 0.3 v - - 1.0 v 35 - - collector-emitter saturation voltage (note 2) ce(sat) v i = 150ma, i = 15ma cb i = 500ma, i = 50ma cb base-emitter saturation voltage (note 2) be(sat) v 0.6 - 1.2 v - - 2.0 gain-bandwidth product t f 300 - - mhz collector-base capacitance cbo c - - 8.0 pf cb v = 10v, f =1.0mhz v = 20v, i = 20ma f = 100mhz emitter-base capacitance ebo c--25pf eb v = 0.5v, f =1.0mhz mmdt2222a 50 - - 75 - - 50 - - - 100 - 300 i = 0.1ma, v = 10v ce c delay time d t--10ns cc rise time r t--25ns storage time s t - - 225 ns fall time f t - 60 ns v = 60v, v = 3.0v eb ce i = 1.0ma, v = 10v ce c i = 10ma, v = 10v ce c i =10ma, v =10v, t =-55 c ce c i = 150ma, v = 10v ce c i = 150ma, i = 15ma cb i = 500ma, i = 50ma cb c ce be c b1 v = 30v, i =150m a i = i = 15ma cc c b2 b1 40 - - i = 500ma, v = 10v ce c 35 - - i = 150ma, v = 1.0v ce c j
1 10 100 0.1 1 10 100 reverse voltage, v r (v) capacitance (p f c ib ( eb ) c o b ( cb ) f=1 mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 collector current, i c (ma) v be (sat) (v) t j = 25 c t j = 150 c i c /i b = 10 t j = 100 c 0 50 100 150 200 250 300 350 400 450 500 0.1 1 10 100 1000 collector current, i c (ma) v ce (sat) (mv) t j = 25 c t j = 150 c i c /i b = 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100 1000 collector current, i c (ma) v be (on) t j = 25 c t j = 150 c t j = 100 c v ce = 10v 0 50 100 150 200 250 300 350 0.1 1 10 100 1000 collector current, i c (ma) h fe t j = 25 c t j = 150 c t j = 100 c v ce = 10v mmdt2222a characteristics curves (each transistor) j t = 25c unless otherwise noted www.panjit.com 1/2/2006 page 3 fig. 2. vbe vs. ic fig. 1. hfe vs. ic fig. 3. vce(sat) vs. ic fig. 4. vbe(sat) vs. ic fig. 5. capacitances
www.panjit.com 1/2/2006 page 4 ordering information mmdt2222a t/r7 - 3,000 units per 7 inch reel mmdt2222a t/r13 -10,000 units per 13 inch reel copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. package layout and suggested pad dimensions mmdt2222a


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